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Fraunhofer HHI, one of the world’s leading research institutes of optical components, is pleased to announce a novel double-side electroabsorption modulated DFB laser (DS-EML). This chip, co-developed with Huawei, integrates EAMs at both sides of a single DFB which allows modulating two independent signals from both laser sides. The operation of 2 x 56 Gb/s NRZ data with excellent eyes on a single DSEML device has been demonstrated.
The latest result of 100G DP-PAM4 system test using the DS-EML device will be shown for the first time during the presentation. By using this novel design, the researchers from HHI and Huawei successfully demonstrated a 100G single wavelength transmission system with sufficient link budget for 80km fiber without EDFA or SOA. For 100Gbps metro optical interconnection applications, a low cost and high performance module is needed among aggregation layer routers. This novel design is based on traditional EML structure, thus will have a huge advantage in size, power and transmitting distance, which will make it fit small modules like CFP2-DCO.
The paper ‘2 x 56 GB/s from a Double Side Electroabsorption Modulated DFB Laser’ (Tu3D.6) will be presented on March 22nd afternoon. For any further information you are welcome to visit us at our booth 3013.
Chip Features and Highlights :
· Single chip supporting 2 independent channels with excellent consistency
· High bandwidth for 56Gbaud signals
· Common Active structure
· Single wavelength 100G for 80km fiber transmission without amplifiers
This article is edited by C-light Network. Please contact us if any future opportunities arise where we can be of service to you.
· Single chip supporting 2 independent channels with excellent consistency
· High bandwidth for 56Gbaud signals
· Common Active structure
· Single wavelength 100G for 80km fiber transmission without amplifiers
This article is edited by C-light Network. Please contact us if any future opportunities arise where we can be of service to you.·
